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| NTB25P06 Power MOSFET -60 V, -27.5 A, P-Channel D2PAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. Features * Pb-Free Packages are Available Typical Applications V(BR)DSS -60 V http://onsemi.com RDS(on) TYP 65 mW @ -10 V ID MAX -27.5 A * * * * PWM Motor Controls Power Supplies Converters Bridge Circuits P-Channel D MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous - Non-Repetitive (tpv10 ms) Drain Current - Continuous @ TA = 25C - Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 25 V, VGS = 10 V, IL(pk) = 20 A, L = 3 mH, RG = 25 W) Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, (1/8 from case for 10 s) Symbol VDSS VGS VGSM ID IDM PD TJ, Tstg EAS Value -60 "15 "20 27.5 80 120 -55 to +175 600 Unit V V Vpk 4 A Apk W C mJ 1 2 3 D2PAK CASE 418B STYLE 2 NTB25P06 YWW G S MARKING DIAGRAM & PIN ASSIGNMENT Drain Drain Gate Source C/W RqJC RqJA RqJA TL 1.25 46.8 63.2 260 C NTB25P06 = Device Code Y = Year WW = Work Week ORDERING INFORMATION Device NTB25P06 NTB25P06G NTB25P06T4 NTB25P06T4G Package D2PAK D2PAK (Pb-Free) D2PAK D2PAK (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Shipping 50 Units/Rail 50 Units/Rail 800/Tape & Reel 800/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1 pad size (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu Area 0.412 in2). (c) Semiconductor Components Industries, LLC, 2004 1 August, 2004 - Rev. 2 Publication Order Number: NTB25P06/D NTB25P06 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 V, ID = -250 mA) (Positive Temperature Coefficient) Zero Gate Voltage Drain Current (VGS = 0 V, VDS = -60 V, TJ = 25C) (VGS = 0 V, VDS = -60 V, , TJ = 150C) Gate-Body Leakage Current (VGS = 15 V, VDS = 0 V) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (VDS = VGS, ID = -250 mA) (Negative Threshold Temperature Coefficient) Static Drain-Source On-State Resistance (VGS = -10 V, ID = -12.5 A) (VGS = -10 V, ID = -25 A) Forward Transconductance (VDS = -10 V, ID = -12.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 3 & 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = -48 V, ID = -25 A, VGS = -10 V) BODY-DRAIN DIODE RATINGS (Note 3) Diode Forward On-Voltage Reverse Recovery Time (IS = -25 A, VGS = 0 V, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge (IS = -25 A, VGS = 0 V) (IS = -25 A, VGS = 0 V, TJ = 150C) VSD trr ta tb QRR 3. Indicates Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. - - - - - - -1.8 -1.4 70 50 20 0.2 -2.5 - - - - - mC V ns (VDD = -30 V, ID = -25 A, VGS = -10 V RG = 9.1 W) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 14 72 43 190 33 6.5 15 24 118 68 320 50 - - ns ns ns ns nC (VDS = -25 V, VGS = 0 V, F = 1.0 MHz) Ciss Coss Crss - - - 1200 345 90 1680 480 180 pF VGS(th) -2.0 - RDS(on) - - gFS - 13 - 0.065 0.070 0.075 0.082 Mhos -2.8 6.2 -4.0 - V mV/C W V(BR)DSS -60 - IDSS - - IGSS - - - - -10 -100 100 nA - 64 - - V mV/C mA Symbol Min Typ Max Unit http://onsemi.com 2 NTB25P06 50 -ID, DRAIN CURRENT (AMPS) 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 10 -5.5 V -5 V -4.5 V -4.2 V -6 V VGS = -10 V -9 V -8 V TJ = 25C -7 V -ID, DRAIN CURRENT (AMPS) 50 VDS 10 V TJ = 25C 40 30 TJ = -55C TJ = 125C 20 10 0 2 4 6 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 8 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.2 VGS = -10 V 0.15 TJ = 125C 0.1 TJ = 25C 0.05 TJ = -55C 0.095 TJ = 25C 0.085 VGS = -10 V 0.075 VGS = -15 V 0 0 10 20 30 40 50 0.065 10 20 30 40 50 -ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Drain Current and Temperature RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.75 ID = -25 A VGS = -10 V 1.5 10000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V -IDSS, LEAKAGE (nA) 1000 TJ = 150C 1.25 1 100 TJ = 125C 0.75 10 -25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0.5 -50 Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTB25P06 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 3000 2500 C, CAPACITANCE (pF) 2000 1500 1000 500 VDS = 0 V Ciss VGS = 0 V TJ = 25C 10 VDS 8 Q1 6 Q2 QT VGS Crss Ciss 4 Coss Crss 2 ID = -25 A TJ = 25C 0 4 10 15 20 25 30 35 0 10 5 -VGS 0 -VDS 5 0 Qg, TOTAL GATE CHARGE (nC) 10 15 20 25 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 -IS, SOURCE CURRENT (AMPS) 25 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C 20 tr t, TIME (ns) 100 tf td(off) 10 td(on) VDD = -30 V ID = -25 A VGS = -10 V 1 1 10 RG, GATE RESISTANCE (W) 100 15 10 5 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 -ID, DRAIN CURRENT (AMPS) VGS = -20 V SINGLE PULSE TC = 25C 100 EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 600 Figure 10. Diode Forward Voltage vs. Current ID = -25 A 500 400 300 200 100 0 25 10 dc 10 ms 1 ms 1 RDS(on) Limit Thermal Limit Package Limit 1 100 ms 0.1 0.1 10 100 50 75 100 125 150 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 NTB25P06 PACKAGE DIMENSIONS D2PAK CASE 418B-04 ISSUE H C E -B- 4 V W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 A 1 2 3 S -T- SEATING PLANE K G D H 3 PL M W J 0.13 (0.005) VARIABLE CONFIGURATION ZONE L M M TB M R N U L M P L STYLE 2: PIN 1. 2. 3. 4. F VIEW W-W 1 F VIEW W-W 2 F VIEW W-W 3 SOLDERING FOOTPRINT* 8.38 0.33 10.66 0.42 1.016 0.04 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTB25P06 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTB25P06/D |
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